ADPA9007-2
DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
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Features
- Wideband, internally matched, RF power amplifier
- DC-coupled input and output
- Integrated RF power detector
- Integrated temperature sensor
- Gain: 13 dB typical at 8 GHz to 16 GHz
- OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz
- PSAT: 33.5 dBm typical at 8 GHz to 16 GHz
- OIP3: 43.5 dBm typical at 8 GHz to 16 GHz
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The ADPA9007-2CHIP is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally matched and DC-coupled. The ADPA9007-2CHIP includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.
The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an output power for 1 dB compression (OP1dB) of 32.5 dBm, and an output third-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz. The amplifier operates from a typical supply voltage (VDD) of 15 V and has a 500 mA typical quiescent drain current (IDQ), which is adjustable.
The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is specified for operation from −55°C to +85°C.
APPLICATIONS
- Electronic warfare
- Radar
- Test and measurement equipment
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ADPA9007-2
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| ADPA9007-2C-SX | CHIPS OR DIE |
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| ADPA9007-2CHIP | CHIPS OR DIE |
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- ADPA9007-2C-SX
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- CHIPS OR DIE
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