ADPA9007-2

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DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

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Overview

  • Wideband, internally matched, RF power amplifier
  • DC-coupled input and output
  • Integrated RF power detector
  • Integrated temperature sensor
  • Gain: 13 dB typical at 8 GHz to 16 GHz
  • OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz
  • PSAT: 33.5 dBm typical at 8 GHz to 16 GHz
  • OIP3: 43.5 dBm typical at 8 GHz to 16 GHz

The ADPA9007-2CHIP is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally matched and DC-coupled. The ADPA9007-2CHIP includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.

The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an output power for 1 dB compression (OP1dB) of 32.5 dBm, and an output third-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz. The amplifier operates from a typical supply voltage (VDD) of 15 V and has a 500 mA typical quiescent drain current (IDQ), which is adjustable.

The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is specified for operation from −55°C to +85°C.

APPLICATIONS

  • Electronic warfare
  • Radar
  • Test and measurement equipment

ADPA9007-2
DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
ADPA9007 2CHIP Functional Block Diagram ADPA9007-2 CHIP  Pin Configuration
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