Features and Benefits
- Output P1dB: 31 dBm typical at 22 GHz to 36 GHz
- PSAT: 32 dBm typical at 22 GHz to 36 GHz
- Gain: 21.5 dB typical at 22 GHz to 36 GHz
- Output IP3: 41 dBm typical at 22 GHz to 44 GHz
- Supply voltage: 5 V typical at 1400 mA maximum
- 50 Ω matched input and output
- Die size: 3.610 mm × 3.610 mm × 0.102 mm
The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.
- Military and space
- Test instrumentation
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Tools & Simulations
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
Sample & Buy
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