Features and Benefits
- Gain: 18.5 dB typical at 45 GHz to 75 GHz
- Input return loss: 20.0 dB typical at 45 GHz to 75 GHz
- Output return loss: 22.0 dB typical at 45 GHz to 75 GHz
- Output P1dB: 22.0 dBm typical at 45 GHz to 75 GHz
- PSAT: 24.0 dBm typical at 45 GHz to 75 GHz
- Output IP3: 31.0 dBm typical at 45 GHz to 75 GHz
- Supply voltage: 3.5 V at 550 mA
- 50 Ω matched input and output
- Die size: 2.940 mm × 3.320 mm × 0.05 mm
The ADPA7004CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector that operates from 40 GHz to 80 GHz. In the lower band of 40 GHz to 45 GHz, the ADPA7004CHIPS provides a gain of 17 dB typical, an output third-order intercept (IP3) of 30.5 dBm, and output power for 1 dB gain compression (P1dB) of 21.5 dBm. In the upper band of 75 GHz to 80 GHz, the ADPA7004CHIPS provides a gain of 16 dB (typical), an output IP3 of 31.5 dBm, and an output P1dB of 20.5 dBm. The ADPA7004CHIPS requires 550 mA from a 3.5 V supply. The ADPA7004CHIPS amplifier input and output are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
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|ADPA7004CHIP-SX||Material Declaration||Reliability Data||CHIPS OR DIE|
|ADPA7004CHIPS||Material Declaration||Reliability Data||CHIPS OR DIE|
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