Features and Benefits
- Output power for 1 dB compression (P1dB): 28 dBm typical
- Saturated output power (PSAT): 30 dBm typical
- Gain: 15 dB typical
- Output third-order intercept (IP3): 40 dBm typical
- Supply voltage: 5 V at 600 mA
- 50 Ω matched input/output
- Die size: 2.75 mm x 1.805 mm x 0.1 mm
Product DetailsThe ADPA7002 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), distributed power amplifier that operates from 20 to 44 GHz. The amplifier provides 15 dB of small signal gain, 28 dBm output power at 1 dB gain compression and a typical output IP3 of 40dBm, while requiring 600 mA from a 5 V supply on VDD. The ADPA7002 also features inputs/outputs (I/Os) that are internally matched to 50 Ω, facilitating integration into Multi-Chip Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
Sample & Buy
The USA list pricing shown is for BUDGETARY USE ONLY, shown in United States dollars (FOB USA per unit for the stated volume), and is subject to change. International prices may differ due to local duties, taxes, fees and exchange rates. For volume-specific price or delivery quotes, please contact your local Analog Devices, Inc. sales office or authorized distributor. Pricing displayed for Evaluation Boards and Kits is based on 1-piece pricing.