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ADPA7001-Die

RECOMMENDED FOR NEW DESIGNS

50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier

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Overview

  • Gain: 14.5 dB typical at 50 GHz to 70 GHz
  • S11: 22 dB typical at 50 GHz to 70 GHz
  • S22: 19 dB typical at 50 GHz to 70 GHz
  • P1dB: 17 dBm typical at 50 GHz to 70 GHz
  • PSAT: 21 dBm typical
  • OIP3: 25 dBm typical at 70 GHz to 90 GHz
  • Supply voltage: 3.5 V at 350 mA
  • 50 Ω matched input/output
  • Die size: 2.5 mm × 3.32 mm × 0.05 mm

The ADPA7001CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector that operates from 50 GHz to 95 GHz. In the lower band of 50 GHz to 70 GHz, the ADPA7001CHIPS provides 14.5 dB (typical) of gain, 25.5 dBm output third-order intercept (OIP3), and 17 dBm of output power for 1 dB gain compression. In the upper band of 70 GHz to 90 GHz, the ADPA7001CHIPS provides 14 dB (typical) of gain, 25 dBm output IP3, and 17.5 dBm of output power for 1 dB gain compression. The ADPA7001CHIPS requires 350 mA from a 3.5 V supply. The ADPA7001CHIPS amplifier inputs/outputs are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.

Applications

  • Test instrumentation
  • Military and space
  • Telecommunications infrastructure

ADPA7001-Die
50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier
ADPA7001CHIPS Pin Configuration
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Software Resources

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Tools & Simulations

S-Parameter 1

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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