Features and Benefits
- Output P1dB: 19 dBm (typical at 7 GHz to 11 GHz)
- PSAT: 23 dBm (typical at 7 GHz to 14 GHz)
- Gain: 13 dB (typical at 7 GHz to 11 GHz)
- Output IP3: 31.5 dBm (typical at 7 GHz to 11 GHz)
- Phase noise: −172 dBc/Hz at 10 kHz offset
- VCC: 5 V at ICQ = 76 mA
- Die size: 1.490 mm × 0.930 mm × 0.102 mm
The ADL8150ACHIP is a self biased, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 13 dB of gain, 19 dBm output power for 1 dB gain compression (P1dB), and an output third-order intercept (IP3) of 31.5 dBm at 7 GHz to 11 GHz. The amplifier requires 76 mA of quiescent collector supply current (ICQ) from a 5 V supply voltage (VCC). The ADL8150ACHIP also features inputs and outputs (I/Os) that are internally matched to 50 Ω and facilitates integration into multichip modules (MCMs). All data is taken with the chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mil) long.
- Military and space
- Test instrumentation
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Tools & Simulations
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
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