Overview

Features and Benefits

  • OP1dB: 18 dBm (typical at 7 GHz to 12 GHz)
  • PSAT: 22 dBm (typical at 7 GHz to 12 GHz)
  • Gain: 12 dB (typical at 7 GHz to 12 GHz)
  • OIP3: 30 dBm typical
  • Phase noise: −172 dBc/Hz at 10 kHz offset
  • Supply voltage: 5 V at 74 mA
  • 6-lead, 2 mm × 2 mm LFCSP

Product Details

The ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical signal gain, 18 dBm output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 30 dBm. The amplifier requires 74 mA from a 5 V collector supply voltage.

The ADL8150 also features inputs and outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). Note that throughout the data sheet, multifunction pins, such as RFOUT/VCC, are referred to either by the entire pin name or by a single function of the pin, for example, RFOUT, when only that function is relevant.

Applications

  • Military and space
  • Test instrumentation
  • Communications

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well.  "Zero defects" for shipped products is always our goal.

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.