ADH635S

RECOMMENDED FOR NEW DESIGNS

Aerospace, GaAs, PHEMT, MMIC, Driver Amplifier, 18 GHz to 40 GHz

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Overview

  • Gain: 19.5 dB
  • P1dB: +23 dBm
  • Output IP3: 29 dBm
  • Saturated Power: + 24 dBm @ 15% PAE
  • Single Voltage: +5V @ 280 mA
  • 50 Ohm Matched Input/Output
  • Small Die Size: 1.95 mm x 0.84 mm x 0.1 mm
  • Screened in accordance with MIL-PRF-38534, Class K

The ADH635S is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 GHz and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the ADH635S can provide up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs).

Applications

  • Point-to-Point Radios
  • Point-to-Multi-Point & VSAT
  • LO Driver
  • Military & Space
ADH635S
Aerospace, GaAs, PHEMT, MMIC, Driver Amplifier, 18 GHz to 40 GHz
HMC6987 SID
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Documentation

Application Note 1

Controlled Drawings 1

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