ADH606S

RECOMMENDED FOR NEW DESIGNS

2 GHz to 18 GHz, UltraLow Phase Noise, Distributed Amplifier

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Overview

  • Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
  • P1dB output power: + 15 dBm
  • Gain: 14 dB
  • Output IP3: + 27 dBm
  • Supply Voltage: +5 V @ 64 mA
  • 50 Ω Matched Input/Output
  • Die size: 2.802 mm x 1.73 mm x 0.1 mm
  • Screened in accordance with MIL-PRF-38534, Class K

The ADH606S is a Distributed Amplifier die which operates between 2 GHz and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra-low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The ADH606S provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The ADH606S amplifier I/Os are internally matched to 50 Ω facilitating easy integration into Multi-Chip-Modules (MCMs).

Applications

  • Microwave Radio
  • Test Instrumentation
  • Optical Communications
  • Military & Space
ADH606S
2 GHz to 18 GHz, UltraLow Phase Noise, Distributed Amplifier
sid000018a adh606s
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Documentation

Application Note 1

Controlled Drawings 1

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