ADH1126S

RECOMMENDED FOR NEW DESIGNS

Aerospace, GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz – 50 GHz

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Overview

  • Output Power for 1 dB Compression (OP1dB): 17.5 dB Typ.
  • Saturated Output Power (PSAT): 21 dBm Typ.
  • Gain: 11 dB Typ.
  • Output Third-Order Intercept (OIP3): +28 dBm Typ.
  • Supply Voltage: +5 V @ 65 mA
  • 50 Ω matched Input/Output.
  • Die Size: 2.3 mm X 1.45 mm X 0.05 mm
  • Screened in accordance with MIL-PRF-38534, Class K

The ADH1126S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The ADH1126S provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.

The ADH1126S amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs).

Applications

  • Instrumentation
  • Microwave Communications
  • Military & Space
ADH1126S
Aerospace, GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz – 50 GHz
HMC8659 SID
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Documentation

Application Note 1

Controlled Drawings 1

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