LTC1155

PRODUCTION

Dual High Side Micropower MOSFET Driver

Data Sheet (Rev. C) Product Selection Table
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Overview

  • Fully Enhances N-Channel Power MOSFETs
  • 8μA Standby Current
  • 85μA ON Current
  • Short-Circuit Protection
  • Wide Power Supply Range: 4.5V to 18V
  • Controlled Switching ON and OFF Times
  • No External Charge Pump Components
  • Replaces P-Channel High Side MOSFETs
  • Compatible with Standard Logic Families
  • Available in 8-Pin SO Package

The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8μA standby current and 85μA operating current, allows use in virtually all systems with maximum efficiency.

Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.

The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower “sleep” operation is required.

The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages.

APPLICATIONS

  • Laptop Power Bus Switching
  • SCSI Termination Power Switching
  • Cellular Phone Power Management
  • P-Channel Switch Replacement
  • Relay and Solenoid Drivers
  • Low Frequency Half H-Bridge
  • Motor Speed and Torque Control
LTC1155
Dual High Side Micropower MOSFET Driver
LTC1155 Pin Configuration LTC1155 Pin Configuration LTC1155 Pin Configuration
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Documentation

Data Sheet 1

Reliability Data 1

Application Note 3

Design Note 1

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Tools & Simulations

LTspice

Models for the following parts are available in LTspice:

  • LTC1155
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