HMC757

Obsolete

HMC757 / HMC757LP4E

Half-Watt Power Amplifier Chip or SMT, 16 GHz to 24 GHz

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Overview

  • Saturated output power:+27.5 dBm at 21% PAE, +30 dBm at 30% PAE
  • High output IP3: 34.5 dBm, 37 dBm
  • High gain: 20.5 dB, 22 dB
  • DC supply: +5 V at 400 mA, +7 V at 395 mA
  • 50 Ω matched input/output
  • No external matching required
  • Die size: 2.4 × 0.9 × 0.1 mm
  • 32-lead, 5 × 5 mm, surface-mount technology (SMT) package

The HMC757 devices are three-stage, GaAs, PHEMT, monolithic microwave integrated circuit (MMIC), half-watt and one-watt power amplifiers which operate between 16 GHz and 24 GHz. These amplifiers provide up to 20.5 dB or 22 dB of gain and +27.5 dBm of saturated output power at 21% PAE or 30 dBm of saturated output power at 30% PAE from a +5 V or +7 V supply. The RF inputs/outputs are dc-blocked and matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. The 4 × 4 mm, plastic package of the power amplifier SMT eliminates the need for wirebonding and is compatible with surface-mount manufacturing techniques.

Applications

  • Point-to-point radios
  • Point-to-multipoint radios
  • VSAT
  • Military and space

Suggested Replacement Parts

HMC498

HMC757

HMC757 / HMC757LP4E

Half-Watt Power Amplifier Chip or SMT, 16 GHz to 24 GHz

HMC757_fbl HMC757LP4_fbl
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Documentation

Data Sheet 1

Obsolete Data Sheet 1

Data Sheet

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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC498LC4 Medium Power Amplifier SMT, 17 - 24 GHz
HMC498-Die Medium Power Amplifier Chip, 17 - 24 GHz
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Tools & Simulations

S-Parameter 1


Evaluation Kits

EVAL-HMC757LP4E
HMC757LP4E Evaluation Board

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