HMC453QS16G

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1.6 Watt Power Amplifier SMT, 0.4 - 2.2 GHz

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Overview

  • Output IP3: +51 dBm
  • 21.5 dB Gain @ 400 MHz
  • 8 dB Gain @ 2100 MHz
  • 45% PAE @ +32 dBm Pout
  • +25 dBm CDMA2000
    Channel Power@ -45 dBc ACP
  • Single +5V Supply
  • Integrated Power Control (VPD)
  • QSOP16G SMT Package: 29.4 mm²

The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.

Applications

  • GSM, GPRS & EDGE 
  • CDMA & W-CDMA 
  • CATV/Cable Modem 
  • Fixed Wireless & WLL

HMC453QS16G
1.6 Watt Power Amplifier SMT, 0.4 - 2.2 GHz
HMC453QS16G_fbl
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Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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Evaluation Kits

EVAL-HMC453QS16G
HMC453QS16G Evaluation Board.

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