HMC452QS16G Data Sheet10/19/2015
Features and Benefits
- Output IP3: +48 dBm
- 22.5 dB Gain @ 400 MHz
- 9 dB Gain @ 2100 MHz
- 53% PAE @ +31 dBm Pout
- +24 dBm CDMA2000
Channel Power@ -45 dBc ACP
- Single +5V Supply
- Integrated Power Control (VPD)
- QSOP16G SMT Package: 29.4 mm²
The HMC452QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC452QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.
- GSM, GPRS & EDGE
- CDMA & W-CDMA
- CATV/Cable Modem
- Fixed Wireless & WLL
Product Lifecycle Production
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.