Features and Benefits

  • High saturated output power (PSAT): 36.5 dBm at 30% power added efficiency (PAE)
  • High output third-order intercept (IP3): 44 dBm typical
  • High gain: 28 dB typical
  • High output power for 1 dB compression (P1dB): 36 dBm typical
  • Total supply current: 2200 mA at 7 V
  • 40-lead, 6 mm × 6 mm LFCSP package: 36 mm22

Product Details

The HMC1121 is a three-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 4 W power amplifier with an integrated temperature compensated on-chip power detector that operates between 5.5 GHz and 8.5 GHz. The HMC1121 provides 28 dB of gain, 44 dBm output IP3, and 36.5 dBm of saturated output power at 30% PAE from a 7 V power supply.

The HMC1121 exhibits excellent linearity and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification preceding the antenna.

Ideal for supporting higher volume applications, the HMC1121 is provided in a 40-lead LFCSP package.


  • Point to point radios
  • Point to multipoint radios 
  • Very small aperture terminals (VSATs) and satellite communications (SATCOMs)
  • Military electronic warfare  (EW) and electronic counter measures (ECM)

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.