Products
HMC995
Obsolete3 Watt Power Amplifier SMT, 12 - 16 GHz
- Part Models
- 2
- 1ku List Price
- price unavailable
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Overview
- Saturated Output Power:
35.5 dBm @ 24% PAE - High Output IP3: 41 dBm
- High Gain: 27 dB
- DC Supply: +7V @ 1200 mA
- No External Matching Required
The HMC995LP5GE is a 4 stage GaAs pHEMT MMIC 3 Watt Power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12 and 16 GHz. The HMC995LP5GE provides 27 dB of gain, 35.5 dBm of saturated output power, and 24% PAE from a +7V supply. The HMC995LP5GE exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The HMC995LP5GE amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5 x 5 mm surface mount package and requires no external matching components.
Applications
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- VSAT & SATCOM
- Military & Space
Documentation
Obsolete Data Sheet 1
Quality Documentation 4
Tape & Reel Specification 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC995LP5GE | 24 ld LFCSP (5x5mm w/2.35mm EP) | ||
| HMC995LP5GETR | 24 ld LFCSP (5x5mm w/2.35mm EP) |
| Part Models | Product Lifecycle | PCN |
|---|---|---|
|
Mar 3, 2016 - 16_0010 Discontinuance of Select RF and Microwave Products |
||
| HMC995LP5GE | Obsolete | |
| HMC995LP5GETR | Obsolete | |
This is the most up-to-date revision of the Data Sheet.