HMC8142

81 GHz to 86 GHz, E-Band Power Amplifier with Power Detector

Data Sheet (Rev. A)
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Overview

  • Gain: 21 dB typical
  • Output power for 1 dB compression (P1dB): 25 dBm typical 
  • Saturated output power (PSAT): 26 dBm typical
  • Output third-order intercept (OIP3): 29 dBm typical
  • Input return loss: 12 dB typical 
  • Output return loss: 8 dB typical
  • DC supply: 4 V at 450 mA 
  • No external matching required 
  • Die size: 3.039 mm × 1.999 mm × 0.05 mm

The HMC8142 is an integrated E-band gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GHz. The HMC8142 provides 21 dB of gain, 25 dBm of output power at 1 dB compression, 29 dBm of output third-order intercept, and 26 dBm of saturated output power at 20% power added efficiency (PAE) from a 4 V power supply. The HMC8142 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.05 mil thick × 7 mil long ribbon on each port.

Applications

  • E-band communication systems
  • High capacity wireless backhaul radio systems
  • Test and measurement
HMC8142
81 GHz to 86 GHz, E-Band Power Amplifier with Power Detector
HMC8142 Functional Block Diagram HMC8142 Pin Configuration HMC8142 Circuit Diagram
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Documentation

Data Sheet 1

Application Note 4

Technical Articles 1

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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