HMC757 / HMC757LP4E
Half-Watt Power Amplifier Chip or SMT, 16 GHz to 24 GHz
The HMC757 devices are three-stage, GaAs, PHEMT, monolithic microwave integrated circuit (MMIC), half-watt and one-watt power amplifiers which operate between 16 GHz and 24 GHz. These amplifiers provide up to 20.5 dB or 22 dB of gain and +27.5 dBm of saturated output power at 21% PAE or 30 dBm of saturated output power at 30% PAE from a +5 V or +7 V supply. The RF inputs/outputs are dc-blocked and matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. The 4 × 4 mm, plastic package of the power amplifier SMT eliminates the need for wirebonding and is compatible with surface-mount manufacturing techniques.
- Point-to-point radios
- Point-to-multipoint radios
- Military and space