HMC952A

GaAs pHEMT MMIC 2 Watt Power Amplifier with Power Detector 8 - 14 GHz

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Overview

+35 dBm Psat at 26% PAE
High P1dB output power: +34 dBm
High gain: 32 dB
High output IP3: +43 dBm
Supply voltage: Vdd = +6V at 1400 mA
50 ohm matched input/output

The HMC952ALP5GE is a four-stage GaAs pHEMT MMIC Medium Power Amplifier with a temperature compensated on-chip power detector which operates between 8 and 14 GHz. The amplifier provides 32 dB of gain and +34.5 dBm of saturated output power at 26% PAE from a +6V supply. With up to +43 dBm IP3 the HMC952ALP5GE is ideal for linear applications such as point-to-point and point-to-multipoint radios or SATCOM applications demanding +34.5dBm of efficient saturated output power. The RF I/Os are internally matched to 50 Ohms.

Applications

Point-to-point radios
Point-to-multi-point radios
SATCO

Documentation

Data Sheet 1

HMC952ALP5GE: GaAs pHEMT MMIC 2 Watt Power Amplifier with Power Detector 8 - 14 GHz Data Sheet 01/04/2016

Application Note 4

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-2578: Using the VREF Pin of RF Amplifier Power Detectors to Monitor Die Temperature 02/12/2024

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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