HMC7441

GaAs pHEMT MMIC 2 Watt Power Amplifier, 27.5 - 31 GHz

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Overview

Saturated Output Power:
+34 dBm @ 25% PAE
High Output IP3: +38 dBm
High Gain: 23 dB
DC Supply: +6V @ 1000 mA
No External Matching Required
Die Size: 3.18 x 2.84 x 0.1 mm

The HMC7441 is a three-stage GaAs pHEMT Power Amplifier which operates between 27.5 and 31 GHz. The amplifier provides 23 dB of gain and +34 dBm of saturated output power at 25% PAE from a 6V supply. With an excellent output IP3 of +38 dBm, the HMC7441 is ideal for linear applications such as Ka-band VSAT or high capacity point-to-point or point-to-multi-point radios demanding +34 dBm of efficient saturated output power. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data taken with the chip in a 50 Ohm test fixture connected via (1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.

Applications

Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT & SATCOM
Military & Space

Documentation

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

HMC7441 S-Parameters

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HMC7441

Overview

Documentation

Data Sheet 1

Application Note 4

Technical Articles 1

Product Selection Guide 1