HMC414

RECOMMENDED FOR NEW DESIGNS

InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

Viewing:

Overview

  • Gain: 20 dB
  • Saturated Power: +30 dBm
  • 32% PAE
  • Supply Voltage: +2.75V to +5V
  • Power Down Capability
  • Low External Part Count

The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.

Applications

  • BLUETOOTH
  • MMDS

HMC414
InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz
hmc414ms8g_fbl
Add to myAnalog

Add product to the Products section of myAnalog (to receive notifications), to an existing project or to a new project.

Create New Project
Ask a Question

Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

Learn More
Add to myAnalog

Add media to the Resources section of myAnalog, to an existing project or to a new project.

Create New Project

Software Resources

Can't find the software or driver you need?

Request a Driver/Software

Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

Open Tool

S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

Open Tool

Latest Discussions

Recently Viewed