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HMC406

RECOMMENDED FOR NEW DESIGNS

InGaP HBT Power Amplifier SMT, 5 - 6 GHz

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Overview

  • Gain: 17 dB
  • Saturated Power: +29 dBm
  • 38% PAE
  • Supply Voltage: +5V
  • Power Down Capability
  • Low External Part Count

The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage. Vpd can be used for full power down or RF output power/current control.

Applications

  • UNII
  • HiperLAN & 802.11a WLAN

HMC406
InGaP HBT Power Amplifier SMT, 5 - 6 GHz
hmc406ms8g_fbl
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Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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