HMC-C582

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0.01 GHz to 20 GHz, Ultra Wideband Power Amplifier Module

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Overview

  • High gain: 24 dB
  • P1dB output power: 25 dBm, typical
  • Single 15 V supply
  • Hermetically sealed
  • Field replaceable SMA connector
  • −40°C to +75°C operating temperature range

The HMC-C582 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transfer (pHEMT) power amplifier in a miniature, hermetic module with replaceable SMA connectors that operates between 0.01 GHz and 20 GHz. The amplifier provides typically 24 dB of gain, up to 36 dBm output IP3, and up to 26 dBm of output power at 1 dB gain compression.

Gain flatness is excellent from 0.01 GHz to 20 GHz, making the HMC-C582 ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, fiber optic, and test equipment applications. The wideband amplifier inputs/outputs (I/Os) are internally matched to 50 Ω and are dc blocked. Integrated voltage regulators allow flexible biasing and sequencing control for robust operation.

Applications

  • Telecommunications infrastructure
  • Microwave radios and VSATs
  • Military and space
  • Test and measurement
  • Fiber optics

HMC-C582

0.01 GHz to 20 GHz, Ultra Wideband Power Amplifier Module

HMC-C582 Functional Block Diagram HMC-C582 Pin Configuration
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