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Gallium Nitride (GaN) Solutions in Radio Frequency (RF)

GaN power amplifiers provide high output power in a compact footprint coupled with high efficiency, resulting in reduced heat dissipation, greater overall system efficiency, and reduced system design complexity. GaN amplifiers also offer exceptional linearity over both narrow and wide bandwidths, ensuring signal fidelity and enhanced system performance. The inherent reliability and durability of Analog Devices’ GaN power amplifiers make them a practical choice for RF system designs across aerospace and defense, communications, and test and measurement markets, ensuring long-lasting and dependable operation in demanding environments.

Value and Benefits

  • Industry-Leading Performance: ADI GaN PAs meet the toughest sensing, amplification, and communication targets.
  • Accelerated Development: Robust design support speeds solutions to market.
  • Efficiency Gains: Reduce output combining losses and achieve higher PAE.
  • Power Advantage: Higher breakdown voltage enables more power, density, and improved thermal conductivity.
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