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Gallium Nitride (GaN) Technology

The higher power density of gallium nitride (GaN) means higher power in a smaller footprint, fewer components, smaller systems, and less weight—contributing to more reliable and more efficient systems.

Analog Devices’ breadth and depth of expertise in GaN device design and support combined with our deep domain knowledge makes us the ideal partner for realizing the benefits of GaN technology.

Explore Applications in Gallium Nitride (GaN) Technology

  • Gallium Nitride (GaN) Solutions in Power right arrow
  • Gallium Nitride (GaN) Solutions in Radio Frequency (RF) right arrow
Gallium Nitride (GaN) Solutions in Power

Gallium Nitride (GaN) Solutions in Power

Simplified designs enable the control or drive of GaN power stages.

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Gallium Nitride (GaN) Solutions in Radio Frequency (RF)

Gallium Nitride (GaN) Solutions in Radio Frequency (RF)

Overcome significant size, weight, and power (SWaP) demands.

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Gallium Nitride (GaN) Solutions in Power

Simplified designs enable the control or drive of GaN power stages.

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Gallium Nitride (GaN) Solutions in Radio Frequency (RF)

Overcome significant size, weight, and power (SWaP) demands.

ADI Drives GaN Innovation

GaN has emerged as a revolutionary semiconductor material with several distinct advantages over incumbent technologies in both power electronics and radio frequency (RF) applications. We are leveraging GaN to develop and enable solutions that offer higher power density, superior efficiency, and ultra-fast switching speeds. GaN’s versatility, combined with its ability to operate at high frequencies and handle high power densities, positions it as a pivotal technology driving innovation in power electronics, telecommunications, aerospace and defense, and beyond.

How ADI Partners with Others to Provide Solutions

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How ADI ensures quality and reliability of its products

See our resources for media to access details about media contact, authorization requests, and available downloads.