DS1270W

3.3V 16Mb Nonvolatile SRAM

3.3V Nonvolatile SRAMs Provide Up to 16Mb Density

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Overview

  • Five years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Unlimited write cycles
  • Low-power CMOS operation
  • Read and write access times of 100ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Optional industrial (IND) temperature range of -40°C to +85°C

The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed, and no additional support circuitry is required for microprocessor interfacing.

Applications

  • Automated Test Equipment (ATE)
  • Automatic Utility Meter Reading
  • Building Energy Management (HVAC)
  • Cable Modems
  • Computers: Desktop, Workstation, Server
  • Digital Television (Receivers, Set-Top Boxes)
  • Modems (Analog, ISDN, DSL)
  • Network Hubs, Switches, Routers
  • Notebook Computers
  • Oscilloscopes
  • Printers and Faxes
  • Programmable Logic Controllers
  • Storage Systems
  • Test and Measurement Equipment

DS1270W
3.3V 16Mb Nonvolatile SRAM
DS1270W: Pin Assignment
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Hardware Ecosystem

Parts Product Life Cycle Description
Memory & Data Loggers 7
DS1270Y RECOMMENDED FOR NEW DESIGNS 16M Nonvolatile SRAM
DS1270AB RECOMMENDED FOR NEW DESIGNS 16M Nonvolatile SRAM
DS1230W PRODUCTION 3.3V 256k Nonvolatile SRAM
DS1245W PRODUCTION 3.3V 1024k Nonvolatile SRAM
DS1249W 3.3V 2048kb Nonvolatile SRAM
DS1250W PRODUCTION 3.3V 4096k Nonvolatile SRAM
DS1265W 3.3V 8Mb Nonvolatile SRAM
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