ADG436: Dual SPDT Switch Data Sheet (Rev. B)5/14/2010317 kB
Features and Benefits
- 44 V Supply Maximum Ratings
- VSS to VDD Analog Signal Range
- Low On-Resistance (12 Ω typ)
- Low Δ Ron (3 Ω Max)
- Low Ron Match (2.5 Ω Max)
- Low Power Dissipation
- Low Leakage Currents (5 nA Max)
- Fast Switching Times
ton < 175 ns
toff < 145 ns
- Low Charge Injection (10 pC)
- Break-Before-Make Switching Action
- 16-Lead DIP and SOIC Packages
The ADG436 is a monolithic CMOS device comprising two independently selectable SPDT switches. It is designed on an LC2MOS process which provides low power dissipation yet gives high switching speed and low on resistance.
Each switch conducts equally well in both directions when ON and has an input signal range which extends to the power supplies. In the OFF condition, signal levels up to the supplies are blocked. All switches exhibit break-before-make switching action for use in multiplexer applications. Inherent in the design is low charge injection for minimum transients when switching the digital inputs.
Product Lifecycle Production
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
Documentation & Resources
Switches and Multiplexers Product Selection Guide5/9/2008614 K
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|Part Number||Material Declaration||Reliability Data||Pin/Package Drawing||CAD Symbols, Footprints & 3D Models|
|ADG436BNZ||Material Declaration||Reliability Data||16-Lead PDIP|
|ADG436BRZ||Material Declaration||Reliability Data||16-Lead SOIC|
|ADG436BRZ-REEL||Material Declaration||Reliability Data||16-Lead SOIC|
|Wafer Fabrication Data|
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