AN-2627: EV-AD74416H-ARDZ EMC Report

Features

EMC robustness testing of the EV-AD74416H-ARDZ

General Description

This application note demonstrates the robustness of the AD74416H during transient immunity testing. Testing is performed, as per the IEC 61000-4-x set of standards, that cover the evaluation of the immunity of electrical and electronic equipment at a system level. The EV-AD74416H-ARDZ evaluation board is characterized to ensure that the circuit performance has sufficient immunity against electrostatic discharge (ESD), electrical fast transients (EFT), and surge.

Figure 1. EV-AD74416H-ARDZ board photo

Summary of Conducted Electromagnetic Compatibility (EMC) Tests

The results of an immunity test are typically classified into four categories, as listed in Table 1. The end-application requirements and their ability to tolerate transient noise determine whether the system sees the specific performance criteria as a failure or not.

Table 1. Performance Classification
Performance Description
Class A Normal performance within an error band specified by the manufacturer.
Class B Temporary loss of function or degradation of performance that ceases after the disturbance is removed. The equipment under test recovers its normal performance without operator intervention.
Class C Temporary loss of function or degradation of performance, correction of performance requires operator intervention, such as manual restart, power off, or power on.
Class D Loss of function or degradation of performance that is not recoverable, permanent damage to hardware or software, or loss of data.
Table 2. EMC Tests Summary (EV-AD74416H-ARDZ)
Test Use Case Standard Test Levels Performance
ESD Voltage output IEC 61000-4-2 ±8kV contact discharge, ±16kV air discharge Class B
Current output Class B
Digital output Class B
Surge Voltage output IEC 61000-4-5 ±1.2kV Class B
Digital output Class B
EFT Voltage output IEC 61000-4-4 ±2kV Class B
Current output Class B
3-wire resistance temperature detector (RTD) measurement Class B
Digital input Class A
Digital output Class A

Jumper Configurations of the EV-AD74416H-ARDZ

Jumper configurations of the EV-AD74416H-ARDZ during EMC testing are determined by the specific use case being tested. Figure 2 and Figure 3 reflect board jumper configuration options.

Figure 2. EV-AD74416H-ARDZ configuration 1 (Digital output)
Figure 3. EV-AD74416H-ARDZ configuration 2 (Others)

Tests Description

ESD

The ESD immunity test emulates the discharges of tens of nanoseconds duration directly on the electronic components. Two discharge methods are used: contact discharge and air discharge. Contact discharge includes a discharge to the conductive surfaces of the device under test (DUT). An ESD test generator is used with a sharp point to make a direct connection to the DUT (pin) for contact ESD testing. A round tip is added to the generator and is brought close to the DUT (pin) to trigger a spark for air-gap ESD testing. The IEC 61000-4-2 test levels are listed in Table 3.

Table 3. IEC 61000-4-2 Test Levels 1 This is the achieved performance of the EV-AD74416H-ARDZ.
Level Contact Discharge (kV) Air Discharge (kV)
1 ±2 ±2
2 ±4 ±4
3 ±6 ±8
41 ±81 ±151

ESD Test Board Setup

There are two methods of applying the discharges: direct and indirect. Direct application involves direct contact to the conductive surfaces and coupling planes. Indirect application involves air discharge at insulating surfaces. The DUT is exposed to at least 20 discharges at each rating for each type of discharge, 10 each at negative and positive polarity. The discharges are repeated at a rate of one discharge per second.

The contact discharges are applied to the contact discharge injection points, depending on the configured mode. Generally, injection points are IO/P_x, IO/N_x, ISN_x, cable shield connection, and horizontal coupling plance (HCP).

The air discharges are applied to the same points as during contact discharge, beside HCP. Those points are IO/P_x, IO/N_x, ISN_x, and shield connection.

The HCP has two 470kΩ bleeding resistors to the ground reference plane (GRP), which is connected to earth ground.

For full schematic setups during ESD testing, see Figure 4 and Figure 5.

Table 4. ESD Test Setup
Use Case Output Connected Load Cable Used EV Kit Jumpers Setting
Voltage output ±6V 1kΩ Shielded 3-wire, P/N 1293C, 3C, 22 AWG, 2 meters Configuration 2
Current output 10mA 500.06Ω Shielded 2-wire, P/N 2211C, SL005, 22 AWG, 2 meters Configuration 2
Digital output ~227mA ~100Ω Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 2 meters Configuration 1
Figure 4. Schematic of the ESD test setup
Figure 5. Photo of the ESD test setup

ESD Test Results

Table 5 through Table 8 reflect the data gathered during EMC testing and testing results. During each test, ~1000 measurement samples are collected and averaged to determine the impact of the ESD test on the DUT accuracy.

Table 5. Contact Discharge (Injection Points: IO/P_x, IO/N_x, ISN_x, Shield Connection, and HCP)—Level 4, ±8kV/Class B 1 Voltage is measured at RLOAD = 500.06Ω and recalculated to current.
Channel Function Pretest Digital
Multimeter (DMM)
Average
Pretest Analog-to-Digital Converter
(ADC) Average
Posttest DMM Average Posttest ADC Average DMM Deviation
(Pre and Post)
(ppmFS)
ADC Deviation
(Pre and Post)
(ppmFS)
CH_A_bi6V 6.004615409V 6.003831022V 6.004656176V 6.00387668V 1.70 1.90
CH_A_bi-6V −6.001820354V −6.001238955V −6.001818618V −6.001229809V +0.07 +0.38
CH_B_bi6V +6.007591012V +6.006742152V +6.007545162V +6.0067045V −1.91 −1.57
CH_B_bi-6V −6.001446495V −6.000794951V −6.001424471V −6.000766199V +0.92 +1.20
CH_C_bi6V 6.003716401V 6.002895277V 6.003722524V 6.002900341V 0.26 0.21
CH_C_bi-6V −6.003450557V −6.002793235V −6.003428643V −6.002771075V +0.91 +0.92
CH_D_bi6V +6.007743144V +6.006943163V +6.007667978V +6.00686348V −3.13 −3.32
CH_D_bi-6V −6.000935691V −6.000343455V −6.001019659V −6.000424806V −3.50 −3.39
CH_A_10mA1 +0.010007245A +0.010008569A +0.010007114A +0.01000831A −5.26 −10.35
CH_B_10mA1 +0.010004338A +0.010005315A +0.010004323A +0.010006013A −0.60 +27.90
CH_C_10mA1 +0.01000277A +0.010004524A +0.010002771A +0.010004215A +0.05 −12.37
CH_D_10mA1 +0.010005839A +0.010007409A +0.010005913A +0.01000711A +2.95 −11.94
Table 6. Digital Output Contact Discharge (Injection Points: IO/P_x, IO/N_x, and HCP)—Level 4, ± 8kV/Class B
Channel Function Pretest DMM Average (V) Pretest ADC Average (A) Posttest DMM Average (V) Posttest ADC Average (A) DMM Deviation (Pre and Post) (%) ADC Deviation (Pre and Post) (%)
CH_A_DO_ON +22.18336224 +0.220602796 +22.1839768 +0.220535877 +0.0028 −0.0303
CH_A_DO_OFF 0.000169791 0.000508626 9.67679E-05 0.000508626 ~0V ~0A
CH_A_DO_ON_SMRT +22.83929409 +0.228207806 +22.83820961 +0.228290932 −0.0047 +0.0364
CH_A_DO_OFF_SMRT 0.000184119 0.000508626 0.000103071 0.000508626 ~0V ~0A
CH_B_DO_ON +22.18932823 +0.219750747 +22.19013657 +0.219732447 +0.0036 −0.0083
CH_B_DO_OFF 0.000169761 0.000508626 0.000104632 0.000508626 ~0V ~0A
CH_B_DO_ON_SMRT +22.84081346 +0.227178835 +22.84012299 +0.227157294 −0.0030 −0.0095
CH_B_DO_OFF_SMRT 0.000173796 0.000508626 0.000101577 0.000508626 ~0V ~0A
CH_C_DO_ON +22.18670078 +0.220008551 +22.18775161 +0.219972498 +0.0047 −0.0164
CH_C_DO_OFF 0.000165048 0.000508626 9.47727E-05 0.000508626 ~0V ~0A
CH_C_DO_ON_SMRT +22.84039546 +0.227600098 +22.83962495 +0.227545046 −0.0034 −0.0242
CH_C_DO_OFF_SMRT 0.000173747 0.000508626 0.000102702 0.000508626 ~0V ~0A
CH_D_DO_ON 22.1826696 0.217738632 22.18320085 0.217832279 0.0024 0.0430
CH_D_DO_OFF 0.00016725 0.000508626 0.000104991 0.000508626 ~0V ~0A
CH_D_DO_ON_SMRT +22.8394737 +0.225451501 +22.83937705 +0.225411658 −0.0004 −0.0177
CH_D_DO_OFF_SMRT 0.000172065 0.000508626 0.000108755 0.000508626 ~0V ~0A
Table 7. Air Discharge (Injection Points Dependable on the Configured Mode: IO/P_x, IO/N_x, ISN_x, and Shield Connection)—Level 4, ±16kV/Class B 1 Voltage is measured at RLOAD = 500.06Ω and recalculated to current.
Channel Function Pretest DMM Average Pretest ADC Average Posttest DMM Average Posttest ADC Average DMM Deviation (Pre and Post) (ppmFS) ADC Deviation (Pre and Post) (ppmFS)
CH_A_10mA1 +0.010007402A +0.010008648A +0.010007255A +0.010008512A −5.86 −5.47
CH_B_10mA1 0.010004392A 0.010005395A 0.010004476A 0.010005495A 3.38 4.00
CH_C_10mA1 +0.010002742A +0.010003837A +0.010002721A +0.010003822A −0.85 −0.62
CH_D_10mA1 +0.010005892A +0.010007102A +0.010005742A +0.010008545A −5.99 +57.71
CH_A_bi6V 6.004623489V 6.003840096V 6.004650668V 6.003868138V 1.13 1.17
CH_A_bi-6V −6.001894773V −6.001296712V −6.001858117V −6.001261495V +1.53 +1.47
CH_B_bi6V +6.007573776V +6.006726515V +6.007505326V +6.006662733V −2.85 −2.66
CH_B_bi-6V −6.001466115V −6.000830791V −6.001485135V −6.000852554V −0.79 −0.91
CH_C_bi6V +6.003884482V +6.003037401V +6.003858485V +6.00305146V −1.08 +0.59
CH_C_bi-6V −6.003470615V −6.002838795V −6.00349384V −6.002856055V −0.97 −0.72
CH_D_bi6V +6.007809671V +6.007014714V +6.007804631V +6.00701726V −0.21 +0.11
CH_D_bi-6V −6.001032974V −6.000447468V −6.001015603V −6.000432093V +0.72 +0.64
Table 8. Digital Output Air Discharge (Injection Points: IO/P_x and IO/N_x)—Level 4, ±16kV/Class B
Channel Function Pretest DMM Average (V) Pretest ADC Average (A) Posttest DMM Average (V) Posttest ADC Average (A) DMM Deviation (Pre and Pos) (%) ADC Deviation (Pre and Pos) (%)
CH_A_DO_ON +22.19597171 +0.21865356 +22.18742846 +0.220580556 −0.0385 +0.8813
CH_A_DO_OFF 0.000185938 0.000508626 8.75423E-05 0.000508626 ~0V ~0A
CH_A_DO_ON_SMRT +22.84237685 +0.228308734 +22.84242271 +0.228248397 +0.0002 −0.0264
CH_A_DO_OFF_SMRT 0.000179676 0.000508626 0.000109608 0.000508626 ~0V ~0A
CH_B_DO_ON +22.19330733 +0.219761069 +22.19436792 +0.219694848 +0.0048 −0.0301
CH_B_DO_OFF 0.000170797 0.000508626 0.000100995 0.000508626 ~0V ~0A
CH_B_DO_ON_SMRT +22.84254127 +0.22735127 +22.84183271 +0.227268244 −0.0031 −0.0365
CH_B_DO_OFF_SMRT 0.000187051 0.000508626 0.00010808 0.000508626 ~0V ~0A
CH_C_DO_ON +22.18857541 +0.220140644 +22.18924095 +0.220098408 +0.0030 −0.0192
CH_C_DO_OFF 0.000170585 0.000508626 9.38875E-05 0.000508626 ~0V ~0A
CH_C_DO_ON_SMRT +22.84084642 +0.227750093 +22.83996994 +0.227679134 −0.0038 −0.0312
CH_C_DO_OFF_SMRT 0.000179314 0.000508626 0.000102094 0.000508626 ~0V ~0A
CH_D_DO_ON +22.18362141 +0.217877506 +22.18406873 +0.217834373 +0.0020 −0.0198
CH_D_DO_OFF 0.00017023 0.000508626 0.000106152 0.000508626 ~0V ~0A
CH_D_DO_ON_SMRT +22.8403201 +0.225468804 +22.83997762 +0.22540722 −0.0015 −0.0273
CH_D_DO_OFF_SMRT 0.000169344 0.000508626 9.9034E-05 0.000508626 ~0V ~0A

ESD Test Conclusion

The EV-AD74416H-ARDZ has passed the ESD test at maximum ESD Level 4, with ±8kV contact discharge and ±16kV air discharge. The setup takes the higher voltage. However, there is no advantage if it exceeds the maximum level defined by the standard. The system consistently performs to Class B (based on the setup capabilities), and no alerts trigger during reflected ESD tests.

The measurement results and comparison of the performance before (pre) and after (post) ESD striking indicate that the maximum absolute deviation is <60ppmFS, measured by the internal ADC in current mode, with the most common deviation around or lower than 5ppmFS. An absolute current error of <60ppmFS corresponds to <1.5μA absolute difference. When the typical expected system accuracy of approximately 0.1%, the 60ppmFS, 0.006% FS is deemed still well within the AD74416H data sheet specification.

The measurement results of digital output voltage and comparison of the performance before (pre) and after (post) EFT striking indicate that the maximum absolute deviation is <1%, which is still within expected performance of the AD74416H chip.

Based on the results, it is concluded that the AD74416H in the EV-AD74416H-ARDZ system is considered robust from an ESD perspective and passes ESD Level 4, ±8kV contact discharge and ±16kV air discharge, with Class B performance.

Surge EMC Testing

The surge immunity test indicates the capability of the device or equipment to survive surges caused by events, such as lightning strikes or industrial power surges caused by switching heavy loads or short-circuit fault conditions.

Per the IEC 61000-4-5 standard for industrial environments, the surge is a combination wave of 1.2μs rising time with 50μs pulse width open circuit voltage and 8μs rising time with 20μs pulse width short-circuit current. The DUT is subject to five positive and five negative surges at each rating. The interval between each surge is 1 min.

Table 9. IEC 61000-4-5 Surge Test Levels 1 This is the achieved performance of the EV-AD74416H-ARDZ.
Level Voltage Peak (kV)
1 ±0.5
21 ±11
3 ±2
4 ±4

Surge Test Board Setup

The surge is tested on the AD74416H output cable, which is treated as both unshielded asymmetrically and symmetrically operated interconnection lines of the DUT. The surge is applied to the input/output (I/O) and sense lines through coupling decoupling network (CDN) 117.

Table 10. Surge Test Setup
Use Case Output Connected Load Cable Used EV Kit Jumpers Setting Surge Pulse Injection Approach
Voltage output +6V 1kΩ Unshielded 3-wire, P/N 1173L, 3C, 22 AWG, 2 meters Configuration 2 ±1.2kV, differential injections towards GND at each line, 3-wire feedback sensing enabled
Voltage output ±6V 1kΩ Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 2 meters Configuration 2 ±1.2kV, common-mode injection, 2-wire feedback sensing enabled
Voltage output ±6V 1kΩ Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 2 meters Configuration 2 ± 1.2 kV, common-mode injection, 4-wire feedback sensing enabled, I/ON_x and ISN_x shorted at output screw terminal
Digital output ~227mA ~100Ω Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 2 meters Configuration 1 ±1.2kV, common-mode injection
Digital output (smart diode enabled) ~227mA ~100Ω Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 2 meters Configuration 1 ±1.2kV, common-mode injection
Figure 6. Schematic of the surge test setup
Figure 7. Photo of the surge test setup

Surge Test Results

Table 11 through Table 14 reflect the data gathered during EMC testing and testing results. During each test, ~1000 measurement samples are collected and averaged to determine the impact of the surge test on the DUT accuracy.

Table 11. Surge Digital Output Testing—Level 2, ± 1.2kV/Class B
Channel Function Pretest DMM Average (V) Pretest ADC Average (A) Posttest DMM Average (V) Posttest ADC Average (A) DMM Deviation (Pre and Post) (%) ADC Deviation (Pre and Post) (%)
CH_A_DO_ON +22.26702735 +0.217451657 +22.26319251 +0.218324898 −0.0172 +0.4016
CH_A_DO_OFF 7.50627E-05 0.000508626 8.68813E-05 0.000508626 ~0V ~0A
CH_A_DO_ON_SMRT +22.91819746 +0.226083643 +22.91758983 +0.225841198 −0.0027 −0.1072
CH_A_DO_OFF_SMRT 0.000158459 0.000508626 7.47942E-05 0.000508626 ~0V ~0A
CH_B_DO_ON +22.26226555 +0.218695747 +22.26397443 +0.21819445 +0.0077 −0.2292
CH_B_DO_OFF 8.99763E-05 0.000508626 9.65352E-05 0.000508626 ~0V ~0A
CH_B_DO_ON_SMRT +22.92435241 +0.225295572 +22.92566065 +0.22464827 +0.0057 −0.2873
CH_B_DO_OFF_SMRT 8.99294E-05 0.000508626 8.95609E-05 0.000508626 ~0V ~0A
CH_C_DO_ON +22.25960502 +0.21954974 +22.26218398 +0.219018674 +0.0116 −0.2419
CH_C_DO_OFF 0.000156521 0.000508626 7.61999E-05 0.000508626 ~0V ~0A
CH_C_DO_ON_SMRT +22.91193522 +0.226724911 +22.91034187 +0.226731543 −0.0070 +0.0029
CH_C_DO_OFF_SMRT 0.000165433 0.000508626 6.90246E-05 0.000508626 ~0V ~0A
CH_D_DO_ON +22.25406162 +0.21715805 +22.25516195 +0.216826395 +0.0049 −0.1527
CH_D_DO_OFF 0.000155781 0.000508626 7.38117E-05 0.000508626 ~0V ~0A
CH_D_DO_ON_SMRT +22.91041748 +0.224284303 +22.91020686 +0.224085241 −0.0009 −0.0888
CH_D_DO_OFF_SMRT 0.000156915 0.000508626 9.03183E-05 0.000508626 ~0V ~0A
Table 12. Surge Voltage Output (4-wire Feedback Sensing Enabled, I/ON_x and ISN_x Shorted at Output Screw Terminal) Testing—Level 2, ±1.2kV/Class B 1 Voltage is measured by DMM, after CDN 117 filer (inductor), because there is a DC voltage drop on the inductor, and the difference between ADC and DMM measurement can be observed. Note that a 4-wire sensing is done towards output screw terminals and not towards connected load, as only 2-wire cable is used. The 4-wire sensing is enabled to test the sensing pins robustness during surge event, once actively operating.
Channel Function Pretest DMM Average (V) Pretest ADC Average (V) Posttest DMM Average (V) Posttest ADC Average (V) DMM Deviation (Pre and Post) (ppmFS) ADC Deviation (Pre and Post) (ppmFS)
CH_A_bi6V +5.9790856121 +6.003617501 +5.979079413 +6.003656119 −0.258285947 +1.609091665
CH_A_bi-6V −5.9762258591 −6.000985789 −5.976146195 −6.00093439 +3.319325572 +2.141618261
CH_B_bi6V 5.9818503281 6.006416305 5.981961022 6.006562188 4.612267157 6.078446613
CH_B_bi-6V −5.9758131651 −6.000575549 −5.975822832 −6.000612105 −0.402774101 −1.523132418
CH_C_bi6V +5.978052561 +6.002692172 +5.97798388 +6.002655594 −2.861687091 −1.524067393
CH_C_bi-6V −5.9777855761 −6.002639454 −5.977770189 −6.00264883 +0.641121732 −0.390702603
CH_D_bi6V +5.982201561 +6.006950241 +5.982084253 +6.006865674 −4.887819445 −3.523627917
CH_D_bi-6V −5.9751449571 −6.000109269 −5.975169647 −6.000082059 −1.028746732 +1.133715405
Table 13. Surge Voltage Output (2-wire Feedback Sensing Enabled) Testing—Level 2, ±1.2kV/Class B
Channel Function Pretest DMM Average (V) Pretest ADC Average (V) Posttest DMM Average (V) Posttest ADC Average (V) DMM Deviation (Pre and Post) (ppmFS) ADC Deviation (Pre and Post) (ppmFS)
CH_A_bi6V 6.005756608 6.004247214 6.005762461 6.004266066 0.243845588 0.785495721
CH_A_bi-6V −6.002207412 −6.000883213 −6.00219723 −6.00088299 +0.424229575 +0.009291312
CH_B_bi6V +6.008516377 +6.006957178 +6.008465721 +6.006913154 −2.110687092 −1.834303725
CH_B_bi-6V −6.001761981 −6.000407283 −6.001773033 −6.000420584 −0.460496324 −0.554206325
CH_C_bi6V 6.004610393 6.003095609 6.004637334 6.00312969 1.12255433 1.420051444
CH_C_bi-6V −6.003803561 −6.002461038 −6.003797568 −6.002456647 +0.249704656 +0.182962885
CH_D_bi6V +6.008860194 +6.007366677 +6.00864293 +6.007161411 −9.052660131 −8.552740602
CH_D_bi-6V −6.001240897 −5.999965478 −6.00123614 −5.999961166 +0.198211601 +0.179690473
Table 14. Differential Surge Testing—Voltage Output (3-wire Feedback Sensing Enabled)—Level 2, ± 1.2kV/Class B
Channel Function Pretest DMM Average (V) Pretest ADC Average (V) Posttest DMM Average (V) Posttest ADC Average (V) DMM Deviation (Pre and Post) (ppmFS) ADC Deviation (Pre and Post) (ppmFS)
CH_A_bi6V 5.993019217 6.017399289 5.993125637 6.017598621 4.434187092 8.305498198
CH_B_bi6V 5.995737393 6.020163575 5.995818788 6.020294864 3.391472222 5.470362364
CH_C_bi6V +5.991887071 +6.016385811 +5.991790021 +6.016287916 −4.043777778 −4.078944524
CH_D_bi6V +5.996042171 +6.020576811 +5.995964225 +6.020470368 −3.247749183 −4.435111495

Surge Test Conclusion

The EV-AD74416H-ARDZ has passed the surge test with maximum surge Level 2, ±1.2kV.

The measurement results of voltage output and comparison of the performance before (pre) and after (post) surge striking indicate that the maximum absolute deviation is <10ppmFS, with most common deviation around or lower than 4ppmFS.

During differential surge voltage output testing, ADC saturation error has been flagged. This poses no concern as a high-voltage spike is directly injected into the ADC input (via protection resistors). During the strike, the voltage measured by ADC is temporarily higher than the ADC range (±12V).

The measurement results of digital output voltage and comparison of the performance before and after surge striking indicate that the maximum absolute deviation is <0.5%, with most common deviation around or lower than 0.1%.

Based on the results, it is concluded that the AD74416H in the EV-AD74416H-ARDZ system is considered robust from a surge perspective and passes Level 2, ±1.2kV, Class B performance.

EFT EMC Testing

Per the IEC 61000-4-4 standard, the DUT is tested with 2000V discharges on the analog input cable. Positive and negative polarity discharges are applied. The duration time of each test is 1 min. The transient and burst waveform is in accordance with IEC 61000-4-4, with a 5ns rising time and a 50ns pulse width. Both 5kHz and 100kHz repetition frequencies are used for the test. The configuration consists of a 0.8-meter high wooden table, covered with a sheet of copper that is at least 0.25mm thick, and connected to the protective grounding system. The DUT is placed on a 0.1-meter thick isolating support. A minimum distance of 0.5 meter is provided between the DUT and the walls of the laboratory.

Table 15. IEC 61000-4-5 Surge Test Levels 1 This is the achieved performance of the EV-AD74416H-ARDZ.
Level Voltage Peak (kV) Repetition Frequency (kHz)
1 ±0.25 5 or 100
2 ±0.5 5 or 100
3 ±1 5 or 100
41 ±21 5 or 1001

EFT Test Board Setup

The EFT test utilizes a cable clamp to inject the signal onto the DUT cable. Representative modes of operation for the AD74416H are selected to ensure the robustness of individual blocks within the DUT during EFT testing.

For full schematic setups during ESD testing, see Figure 8 and Figure 9.

Table 16. EFT Test Setup 1 N/A means not applicable.
Use Case Output Connected Load Cable Used EV Kit Jumpers Setting Note
Voltage output ±6V 1kΩ Shielded 3-wire, P/N 1293C, 3C, 22 AWG, 3 meters Configuration 2 ±2kV, 5kHz, and 100kHz, 3-wire feedback sensing enabled
Current output ±10mA 1kΩ Shielded 2-wire, P/N 2211C, 1PR, 22 AWG, 3 meters Configuration 2 ±2kV, 5kHz, and 100kHz
3-wire RTD N/A1 1kΩ Shielded 3-wire, P/N 1293C, 3C, 22 AWG, 3 meters Configuration 2 ±2kV, 5kHz, and 100kHz
Digital input (buffered input) Sink ~2.4mA ~24V Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 3 meters Configuration 1 ±2kV, 5kHz, and 100kHz, enabled digital counter to achieve Class A performance, 8V threshold, Type I, Type II recommendation—current sink, Code 20
Digital input (unbuffered input) Sink ~2.4mA ~24V Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 3 meters Configuration 1 ±2kV, 5 kHz, and 100kHz, enabled digital counter to achieve Class A performance, 8V threshold, Type I, Type II recommendation—current sink, Code 20
Digital output (smart diode enabled) ~227mA ~100Ω Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 3 meters Configuration 1 ±2kV, 5 kHz, and 100kHz, enabled digital counter to achieve Class A performance
Digital output (smart diode disabled) ~227mA ~100Ω Unshielded 2-wire, P/N 1172C, 2C, 22 AWG, 3 meters Configuration 1 ±2kV, 5 kHz, and 100kHz, enabled digital counter to achieve Class A performance
Figure 8. Schematic of the EFT test setup
Figure 9. Photo of the EFT test setup

EFT Test Results

Table 17 through Table 21 reflect the data gathered during EMC testing and testing results. During each test, ~1000 measurement samples are collected and averaged to determine the impact of the EFT test on the DUT accuracy. During the digital input and digital output testing, the digital counter is enabled, and the counter readings before and after the test are evaluated.

Table 17. EFT Current Output Testing—Level 4, ±2kV/Class B 1 Calculated current is based on 500.2Ω connected load.
Channel Function1 Pretest DMM Average (mA) Pretest ADC Average (mA) Posttest DMM Average (mA) Posttest ADC Average (mA) DMM Deviation (Pre and Post) (ppmFS) ADC Deviation (Pre and Post) (ppmFS)
CH_A_10mA +10.00421566 +10.00805229 +10.00417209 +10.0080314 −1.742726438 −0.835533276
CH_B_10mA +10.00125817 +10.00488043 +10.00123681 +10.00487427 −0.854345319 −0.24628605
CH_C_10mA +9.999841702 +10.00355804 +9.999767647 +10.00349355 −2.962165722 −2.579498704
CH_D_10mA +10.002939 +10.00678848 +10.00283586 +10.00670458 −4.125405524 −3.356039966
Table 18. EFT Voltage Output Testing—Level 4, ±2kV/Class B
Channel Function Pretest DMM Average (V) Pretest ADC Average (V) Posttest DMM Average (V) Posttest ADC Average (V) DMM Deviation (Pre and Post) (ppmFS) ADC Deviation (Pre and Post) (ppmFS)
CH_A_bi6V 6.004288313 6.004343487 6.004339441 6.00443313 2.130316994 3.735107534
CH_A_bi-6V −6.001569726 −6.001850566 −6.001474663 −6.001762138 +3.960942402 +3.684502022
CH_B_bi6V 6.007141284 6.007197733 6.00720344 6.007270367 2.589842728 3.02639662
CH_B_bi-6V −6.001060368 −6.001307584 −6.001076364 −6.001325513 −0.666487337 −0.747044881
CH_C_bi6V 6.003460685 6.003566473 6.003506279 6.003616846 1.899739378 2.098901599
CH_C_bi-6V −6.003018912 −6.003298837 −6.003022444 −6.003302755 −0.147145834 −0.163269978
CH_D_bi6V +6.007527461 +6.007673513 +6.007453293 +6.007598744 −3.090361111 −3.115394536
Table 19. EFT 3-Wire RTD Testing—Level 4, ± 2kV/Class B 1 Measured resistance of the load is 1000.12Ω.
Channel Function1 Pretest DMM Average (V) Pretest ADC Average (Ω) Posttest DMM Average (V) Posttest ADC Average (Ω) DMM Deviation (Pre and Post) (%) ADC Deviation (Pre and Post) (ppm)
CH_A_RTD3W 0.496613138 999.8527807 0.49665881 999.8592397 0.0092 6.459945952
CH_B_RTD3W 0.498422431 999.8805682 0.498585006 999.8897823 0.0326 9.21525613
CH_C_RTD3W +0.500191459 999.8392436 +0.500117048 999.8363445 −0.0149 −2.899536186
CH_D_RTD3W 0.493476857 999.7242131 0.493501285 999.7288876 0.0050 4.675807212
Table 20. EFT Digital Input Testing—Level 4, ± 2kV/Class A
Channel Function Pretest DMM Average (V) Pre-Digital Input Counter (−) Posttest DMM Average (V) Post-Digital Input Counter (−) DMM Deviation (Pre and Post) (ppm) Digital Input Counter Deviation (Pre and Post)
CH_A_DIN_BUF +23.99104351 5 +23.99094821 5 −3.971145833 0
CH_A_DIN_UNBUF +23.99085104 6 +23.99091221 6 +2.548611111 0
CH_B_DIN_BUF +23.99091241 5 +23.9907747 5 −5.738194445 0
CH_B_DIN_UNBUF +23.99080289 6 +23.99068604 6 −4.869027777 0
CH_C_DIN_BUF +23.99087221 5 +23.9907973 5 −3.121562499 0
CH_C_DIN_UNBUF +23.99086004 6 +23.99074612 6 −4.746458333 0
CH_D_DIN_BUF +23.99100253 5 +23.99100368 5 +0.04829861 0
CH_D_DIN_UNBUF +23.99090919 6 +23.99089878 6 −0.433923611 0
Table 21. EFT Digital Output Testing—Level 4, ±2kV/Class A
Channel Function Pretest DMM Average (V) Pretest ADC Average (A) Pre-Digital Input Counter (−) Posttest DMM Average (V) Posttest ADC Average (A) Post-Digital Input Counter (−) DMM Deviation (Pre and Post) (%) ADC Deviation (Pre and Post) (%) Digital Input Counter Deviation (Pre and Post)
CH_A_DO_ON +22.18191112 +0.220095516 4 +22.18073968 +0.220227958 4 −0.0053 +0.0602 0
CH_A_DO_OFF +7.72227E-05 +0.000508626 3 +7.36202E-05 +0.000508626 3 ~0V ~0A 0
CH_A_DO_ON_SMRT +22.82799631 +0.227894503 4 +22.82771023 +0.227689257 4 −0.0013 −0.0901 0
CH_A_DO_OFF_SMRT +0.000186727 +0.000508626 3 +8.54228E-05 +0.000508626 3 ~0V ~0A 0
CH_B_DO_ON +22.184673 +0.219407873 4 +22.18568543 +0.219287249 4 +0.0046 −0.0550 0
CH_B_DO_OFF +0.000183689 +0.000508626 3 +7.85697E-05 +0.000508626 3 ~0V ~0A 0
CH_B_DO_ON_SMRT +22.82747181 +0.226931055 4 +22.82707089 +0.226787542 4 −0.0018 −0.0632 0
CH_B_DO_OFF_SMRT +0.000188705 +0.000508626 3 +8.38924E-05 +0.000508626 3 ~0V ~0A 0
CH_C_DO_ON +22.18052936 +0.219714595 4 +22.18144117 +0.219588785 4 +0.0041 −0.0573 0
CH_C_DO_OFF +0.000185431 +0.000508626 3 +8.20467E-05 +0.000508626 3 ~0V ~0A 0
CH_C_DO_ON_SMRT +22.82604993 +0.227262809 4 +22.82566506 +0.227161233 4 −0.0017 −0.0447 0
CH_C_DO_OFF_SMRT +0.000187416 +0.000508626 3 +7.79442E-05 +0.000508626 3 ~0V ~0A 0
CH_D_DO_ON +22.1757465 +0.217481975 4 +22.17651945 +0.217429965 4 +0.0035 −0.0239 0
CH_D_DO_OFF +0.000179704 +0.000508626 3 +8.50584E-05 +0.000508626 3 ~0V ~0A 0
CH_D_DO_ON_SMRT +22.82576229 +0.224975187 4 +22.82556079 +0.224814521 4 −0.0009 −0.0714 0
CH_D_DO_OFF_SMRT +0.000188933 +0.000508626 3 +8.39961E-05 +0.000508626 3 ~0V ~0A 0

EFT Test Conclusion

The EV-AD74416H-ARDZ has passed EFT test with maximum EFT Level 4, ±2kV.

The measurement results and comparison of the performance before (pre) and after (post) EFT striking indicate that the maximum absolute deviation is <10ppmFS, with most common deviation around or lower than 4ppmFS.

The measurement results of digital output voltage and comparison of the performance before and after EFT striking indicate that the maximum absolute deviation is <0.1%.

During both digital input and digital output testing, input counter is enabled to ensure that DUT is monitored during the EFT testing.

Input voltage comparator is set to 8V and any debounce time is bypassed to reliable detect any change on the screw terminal. There is no difference in the counter count before and after the testing. This results to uninterrupted operation even during the EFT testing, reaching Class A performance for these modes.

Based on the results, it is concluded that the AD74416H in the EV-AD74416H-ARDZ system is considered robust from a EFT perspective and passes Level 4, ±2kV, Class A performance for digital output and digital input modes and Class B performance for other modes.