Features and Benefits
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Unlimited write cycles
- Low-power CMOS operation
- Read and write access times of 70ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Full ±10% VCC operating range (DS1265Y)
- Optional ±5% VCC operating range (DS1265AB)
- Optional industrial temperature range of -40°C to +85°C, designated IND
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Documentation & Resources
DS1265Y Reliability Data1/12/2023
NV SRAM Frequently Asked Questions5/14/2002
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
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Buy Now Pricing
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