DS1258Y

128k x 16 Nonvolatile SRAM

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Features

10-Year Minimum Data Retention in the Absence of External Power
Data is Automatically Protected During a Power Loss
Separate Upper Byte and Lower Byte Chip-Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 70ns
Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
Full ±10% Operating Range (DS1258Y)
Optional ±5% Operating Range (DS1258AB)
Optional Industrial Temperature Range of -40°C to +85°C, Designated IND

Additional Details

The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.