DS1258W

3.3V 128k x 16 Nonvolatile SRAM

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Overview

10-Year Minimum Data Retention in the Absence of External Power
Data is Automatically Protected During a Power Loss
Separate Upper Byte and Lower Byte Chip Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 100ns
Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
Optional Industrial Temperature Range of -40°C to +85°C, Designated IND

The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place of solutions which build nonvolatile 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.