DS1258AB
128k x 16 Nonvolatile SRAM
Part Details
- 10-Year Minimum Data Retention in the Absence of External Power
- Data is Automatically Protected During a Power Loss
- Separate Upper Byte and Lower Byte Chip-Select Inputs
- Unlimited Write Cycles
- Low-Power CMOS
- Read and Write Access Times as Fast as 70ns
- Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
- Full ±10% Operating Range (DS1258Y)
- Optional ±5% Operating Range (DS1258AB)
- Optional Industrial Temperature Range of -40°C to +85°C, Designated IND
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Documentation
This is the most up-to-date revision of the Data Sheet.
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