DS1220Y
16K Nonvolatile SRAM
Overview
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Directly replaces 2k x 8 volatile static RAM or EEPROM
- Unlimited write cycles
- Low-power CMOS
- JEDEC standard 24-pin DIP package
- Read and write access times of 100ns
- Full ±10% operating range
- Optional industrial temperature range of -40°C to +85°C, designated IND
The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
Documentation
Data Sheet 1
Reliability Data 1
Design Note 1
This is the most up-to-date revision of the Data Sheet.
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