DS1220AB
Info: : PRODUCTION
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DS1220AB

16k Nonvolatile SRAM

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Info: : PRODUCTION tooltip
Info: : PRODUCTION tooltip
Part Details
Part Models 5
1ku List Price Starting From $11.95
Features
  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Directly replaces 2k x 8 volatile static RAM or EEPROM
  • Unlimited write cycles
  • Low-power CMOS
  • JEDEC standard 24-pin DIP package
  • Read and write access times of 100ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Full ±10% VCC operating range (DS1220AD)
  • Optional ±5% VCC operating range (DS1220AB)
  • Optional industrial temperature range of -40°C to +85°C, designated IND
Additional Details
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The DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Part Models 5
1ku List Price Starting From $11.95

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
DS1220AB-100IND+
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DS1220AB-150+
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DS1220AB-150IND+
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DS1220AB-200+
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DS1220AB-200IND+
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Software and Part Ecosystem

Software and Part Ecosystem

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