HMC-ALH482-DIE

RECOMMENDED FOR NEW DESIGNS

Low Noise Amplifier Chip, 2 - 22 GHz

Data Sheet Product Selection Table
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Overview

  • Noise Figure: 1.7 dB @ 2-12 GHz
  • Noise Figure: 2.2 dB @ 12-22 GHz
  • Gain: 16 dB @ 12 GHz
  • P1dB Output Power: +14 dBm
  • Supply Voltage: +4V @ 45 mA
  • Die Size: 2.04 x 1.2 x 0.1 mm

The HMC-ALH482 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 2 and 22 GHz. The amplifier provides 16 dB of gain, 1.7 dB noise figure up to 12 GHz and +14 dBm of output power at 1 dB gain compression while requiring only 45 mA from a +4V supply voltage. The HMC-ALH482 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.

Applications

  • Wideband Communication Systems
  • Surveillance Systems
  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Military & Space
  • Test Instrumentation
HMC-ALH482-DIE
Low Noise Amplifier Chip, 2 - 22 GHz
hmc-alh482_fbl
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Documentation

Data Sheet 1

Application Note 5

Technical Articles 1

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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