製品概要

機能と利点

  • High-Density Optimized Design
    • 3x3 Low RDSON Power MOS
    • 12-Layer Layout
    • Hot Swap and Bias Power Supply Already Implemented
  • Highly Efficient Solution
    • Low-Profile Inductors Optimized for STC Resonant Application
    • No Transformers Required
    • Resonant ZCS (Zero-Current Switching) with Adaptative Algorithm
  • Cost-Effective Solution
    • Low-ESR, Low-Cost Capacitors (No Low-Value, Low-Tolerance U2J Ceramic Capacitors have been used)
    • Integrated Gate Driving
    • Integrated Floating Power Supply for All 10 Power FETs
    • No Heat Sink is Required (Air Flow Only for Higher TDP)
  • Protection Features
    • Input Peak Overcurrent Protection
    • Output Overvoltage Protection with SOAR Mitigation
    • Input Overvoltage Protection
    • Bias and Gate Driving Undervoltage Lockout
    • Fault Flag Open Collector Signal Pin
    • Power-Good Signal
  • High-Current Output Connector Compatible with Maxim Second Stage Solution EV Kit
  • Output Adapter Board Available for a Stand-Alone Test Bench Use
  • Proven PCB Layout
  • Fully Assembled and Tested

製品概要

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