HMC461

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1 Watt High IP3 Amplifier SMT, 1.7 - 2.2 GHz

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Overview

+45 dBm Output IP3
(Balanced Configuration)
12 dB Gain
48% PAE @ +30.5 dBm Pout
+20 dBm W-CDMA Channel Power @ -45 dBc ACP
3x3 mm QFN SMT Package

The HMC461LP3(E) is a 1.7 - 2.2 GHz high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) dual-channel MMIC amplifiers. The linear performance of two HMC455LP3 high IP3 drivers is offered in this single IC which can be configured in a balanced or push-pull amplifier circuit. The amplifier provides 12 dB of gain and +30.5 dBm of saturated power at 48% PAE from a single +5 Vdc supply while utilizing external baluns in a balanced configuration.

The high output IP3 of +45 dBm coupled with the low VSWR of 1.2:1 make the HMC461LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the dual MMIC amplifier IC. The LP3 provides an exposed base for excellent RF and thermal performance.

Applications

Multi-Carrier Systems
GSM, GPRS & EDGE
CDMA & W-CDMA
PHS
Balanced or Push-Pull Configurable

Documentation

Data Sheet 1

HMC461 Data Sheet 04/22/2015

Application Note 4

Thermal Management for Surface Mount Components General Application Note 11/11/2015

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC461 S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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