HMC395-DIE

NOT RECOMMENDED FOR NEW DESIGNS

InGaP HBT Gain Block Amplifier Chip, DC - 4 GHz

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Overview

  • Gain: 15 dB
  • P1dB Output Power: +16 dBm
  • Stable Gain Over Temperature
  • 50 Ohm I/O’s
  • Small Size: 0.38 x 0.58 x 0.1 mm

The HMC395 die is a GaAs InGaP Heterojunction Bi-polar Transistor (HBT) Gain Block MMIC DC - 4 GHz amplifier. This amplifier die can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17dBm output power. The HMC395 offers 16 dB of gain and an output IP3 of +31dBm while requiring only 54mA from a +5V supply.

The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC395 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1mil) diameter wire bonds of minimal length 0.5mm (20mils).

Applications

  • Microwave & VSAT Radios
  • Test Equipment
  • Military EW, ECM, C³I
  • Space Telecom

HMC395-DIE
InGaP HBT Gain Block Amplifier Chip, DC - 4 GHz
hmc395_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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