High Temperature

IntroFor applications that push the boundaries of extreme temperature, whether it is steering an oil drill operating a mile underground or making precision measurements on a jet engine, specialized solutions are required to ensure performance and reliability. For these and other demanding applications, ADI offers products designed for extreme temperatures, with a portfolio qualified at 175°C and 210°C.

ADI has developed unique capability to meet the demands of high temperature applications, including:

  • Advanced design techniques
  • Robust silicon processes
  • Innovative packaging
  • Comprehensive qualification and test

This capability enables us to develop products that must have high performance, high reliability, small footprint and low power in extreme harsh, high temperature environments.

Featured Products

 

Technology Enabling High Temperature Products

Introduction

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Standard integrated circuits are typically only designed and specified for a maximum operating temperature of 125°C. Beyond that, many factors can decrease performance and reliability with exposure to extreme temperature. For example, exponentially increasing substrate leakage current and variation of device parameters over temperature can significantly degrade performance. Reliability can be compromised by silicon level concerns such as electromigration and by package level issues such as wire bond wear out. In order to overcome these challenges, products in ADI’s high temperature portfolio have been designed and qualified for high temperature operation using innovative silicon processes, packaging, and test technologies.

Silicon Process

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One enabling silicon technology utilized on several ADI  HT products is our silicon‐on-insulator (SOI) bipolar process. In the diagram below, we compare a typical NPN transistor on a normal junction isolated (JI) bipolar process with the SOI process. The arrows on JI process depict the paths for current leakage within the device and also the parasitic paths for current leakage to the substrate (shown in black arrows).
 
As temperature increases, the effects current leakage increases exponentially, significantly degrading the performance of the device. The SOI process uses a insulating dielectric layer of SiO2 which blocks parasitic current flow in the substrate. By eliminating this parasitic leakage path, device performance can be maintained to very high temperatures.


Figure 5

Advanced Packaging

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Another enabling technology for package reliability at high temperature is ADI’s specialized wire bond process for HT plastic packages. Normal gold/aluminum wire bonds will degrade over temperature with formation of intermetallic compounds that are brittle and form voids and weaken the strength of the bond. This can happen in as little as several hundred hours. Our HT plastic packages utilize an additional metallization step with NiPdAu (shown at tile) in order to have a gold bond pad surface, which together with a gold wire create a mono‐metallic bond that will not form intermetallics. The graphic below shows the reliability improvements gained with this technology — the standard Au/Al bond on the tile has significant voiding and intermetallic formation at 500 hours, while the bond with the NiPdAu metallization process on the right maintains integrity with over 6000 hours of high temperature exposure.

Advanced Packaging Nickle Palladium

 

Au/Al wire bond post 500 hours at 195°C


Advanced Packaging AuAi Posts

Au/Au wire bond with NiPdAu barrier post 6000 hours at 195°C


Advanced Packaging AuOPMi Bond

Reliability Qualification

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Reliability Qualification

ADI’s process flow for HT products includes a comprehensive reliability qualification program tailored to the needs of high temperature applications. All HT products are qualified with the High Temperature Operating Life (HTOL) test, which is performed to JEDEC JESD22‐A108 specifications. A minimum of three assembly lots for each product are tested at maximum temperature for a minimum of 1000 hours and ensured to meet datasheet specifications. In addition to this and other qualification tests, robustness tests such as Latch-up immunity, MIL-STD-883 Group-D Mechanical, and ESD are also performed. Reliability reports for high temp portfolio products are available upon request.

Signal Chains

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Click on a part in the diagram below

Evaluation Kits

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EVAL-ADG798 Circuit Diagram

Product Details

The EVAL-ADG798EB1Z is the evaluation board for the ADG798 high temperature 8:1 multiplexer. The entire board assembly is constructed with high temperature compliant materials and is suitable for short duration device evaluation up to 210°C.


The ADG798 is soldered to the center of the evaluation board, and headers are provided to connect to each of the source and drain pins. A 4-pin header powers the device and provides a user defined digital logic supply voltage.


Full specifications on the ADG798 are available in the ADG798 data sheet, which should be consulted in conjunction with user guide UG-1039 when using the evaluation board.

EVAL-ADXRS645 Circuit Diagram

Product Details

The EVAL-ADXRS645Z is a simple, compact breakout board that facilitates quick performance evaluation of the high temperature ADXRS645 ±2000°/sec analog output single-axis rate gyroscope. Use this evaluation board to evaluate performance on the bench, over temperature, and to facilitate system integration.


The EVAL-ADXRS645Z has two sets of 5-lead, 0.1 inch pin spaced plated through holes that make electrical connections between the ADXRS645 and the existing system. The EVAL- ADXRS645Z also provides four mounting holes for mechanical attachment of the board to the application.


The dimensions of the EVAL-ADXRS645Z are 1.275 inch × 1.275 inch (32.38 mm × 32.38 mm) with two sets of mounting holes. The outer set of holes is 0.15 inch (3.81 mm) in diameter and arranged in a 1.0 inch × 1.0 inch (25.4 mm × 25.4 mm) square around the center of the printed circuit board (PCB). 


All parts in the Bill of Materials section (including polyimide laminate PCB) are rated for high temperature, 175°C, for short duration testing at elevated temperatures. The assembly has not been qualified for extended use at high temperatures.


The schematic and board layout, as well as the board itself, indicate the pin names for easy identification. For additional information on the pin functions, refer to the ADXRS645 data sheet.


R2 is a solder link jumper that connects VRATIO to the VCC input (see Figure 2) on the board. R2 is installed by default and must be removed if a separate VRATIO is desired.


A resistor can be installed in the R1 footprint to extend the measurement range of the device. Refer to the ADXRS645 data sheet for more information on this feature.

EVAL-ADG5298 Circuit Diagram

Product Details

The EVAL-ADG5298EB1Z is the evaluation board for the ADG5298 high temperature 8:1 multiplexer. The entire board assembly is constructed with high temperature compliant materials and is suitable for short duration device evaluation up to 210°C.


The ADG5298 is soldered to the center of the EVALADG5298EB1Z evaluation board, and headers are provided to connect to each of the source and drain pins. A four pin header powers the device and provides a user defined digital logic supply voltage.


Full specifications on the ADG5298 are available in the ADG5298 data sheet, which should be consulted in conjunction with user guide UG-1038 when using the EVAL-ADG5298EB1Z evaluation board.

Technical Resources