Features and Benefits

  • High saturated output power (PSAT): 25 dBm
  • High output third-order intercept (IP3): 35 dBm
  • High gain: 22 dB (24 GHz to 27 GHz)
  • High output power for 1 dB compression (P1dB): 24 dBm
  • DC supply: 5 V at 225 mA
  • Compact 24-lead, 4 mm × 4 mm LCC package

Product Details

The HMC1131 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer(pHEMT), monolithic microwave integrated circuit (MMIC), driver amplifier that operates from 24 GHz to 35 GHz. The HMC1131 provides 22 dB of gain at the 24 GHz to 27 GHz range, 35 dBm output IP3, and 24 dBm of output power at 1 dB gain compression, while requiring 225 mA from a 5 V supply.

The HMC1131 is capable of supplying 25 dBm of saturated output power and is housed in a compact, 4 mm × 4 mm ceramic leadless chip carrier (24-lead LCC). The HMC1131 is an ideal driver amplifier for a wide range of applications, including point-to-point radios, from 24 GHz to 35 GHz.


  • Point-to-point radios
  • Point-to-multipoint radios

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.