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  4. ADuM4135


Overview

Features and Benefits

  • 13 A short-circuit source current (0 Ω gate resistance)
  • 14 A short-circuit sink current (0 Ω gate resistance)
  • 4.61 A peak current (2 Ω gate resistance)
  • Output power device resistance: <1 Ω
  • Desaturation protection
    • Isolated desaturation fault reporting
    • Soft shutdown on fault
  • Miller clamp output with gate sense input
  • Isolated fault and ready functions
  • Low propagation delay: 55 ns typical
  • Minimum pulse width: 50 ns
  • Operating temperature range: −40°C to +125°C
  • Output voltage range to 30 V
  • Input voltage range from 2.5 V to 6 V
  • Output and input undervoltage lockout (UVLO)
  • Creepage distance: 7.8 mm minimum
  • 100 kV/μs common-mode transient immunity (CMTI)
  • 20-year lifetime for 600 V rms or 1092 V dc working voltage
  • Safety and regulatory approvals
    • 5 kV ac for 1 minute per UL 1577
    • CSA Component Acceptance Notice 5A
    • DIN VDE V 0884-11:2017-01
    • VIORM = 849 V peak (reinforced)
  • Qualified for automotive applications

Product Details

The ADuM4135 is a single-channel gate driver specifically optimized for driving insulated gate bipolar transistors (IGBTs). Analog Devices, Inc., iCoupler® technology provides isolation between the input signal and the output gate drive.

The ADuM4135 includes a Miller clamp to provide robust IGBT turn-off with a single-rail supply when the gate voltage drops below 2 V (typical). Operation with unipolar or bipolar secondary supplies is possible, with or without the Miller clamp operation.

The Analog Devices chip scale transformers also provide isolated communication of control information between the high voltage and low voltage domains of the chip. Information on the status of the chip can be read back from dedicated outputs. Control of resetting the device after a fault on the secondary is performed on the primary side of the device.

Integrated onto the ADuM4135 is a desaturation detection circuit that provides protection against high voltage short-circuit IGBT operation. The desaturation protection contains noise reducing features such as a 370 ns (typical) masking time after a switching event to mask voltage spikes due to initial turn-on. An internal 537 μA (typical) current source allows low device count and the internal blanking switch allows the addition of an external current source if more noise immunity is needed.

The secondary UVLO is set to 11.67 V (typical) with common IGBT threshold levels taken into consideration.

APPLICATIONS

  • MOSFET/IGBT gate drivers
  • PV inverters
  • Motor drives
  • Power supplies
  • Automotive
Contact your local sales or distributor to request pre-released samples of the ADUM4135XRWZ.

Product Lifecycle icon-recommended Production

At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.

Evaluation Kits (2)

Documentation & Resources

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  • 3rd Party Solutions (3)
  • Data Sheets (1)
  • Application Notes (4)
  • User Guides (1)
  • Safety and Regulatory Compliance (1)
  • Webcasts (7)
  • Product Selection Guide (1)
  • Solutions Bulletins & Brochures (1)
  • Videos (14)
  • Press Releases (1)
  • Technical Articles (6)
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    Tools & Simulations

    LTspice

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    ADUM4135

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    Part Number Material Declaration Reliability Data Pin/Package Drawing CAD Symbols, Footprints & 3D Models
    ADUM4135BRWZ Material Declaration Reliability Data 16 ld SOIC
    ADUM4135BRWZ-RL Material Declaration Reliability Data 16-Lead SOIC Wide
    ADUM4135WBRWZ Material Declaration Reliability Data 16-Lead SOIC Wide
    ADUM4135WBRWZ-RL Material Declaration Reliability Data 16 ld SOIC
    Wafer Fabrication Data

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    Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.