LTC1157

PRODUCTION

3.3V Dual Micropower High-Side/Low-Side MOSFET Driver

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Overview

  • Allows Lowest Drop 3.3V Supply Switching
  • Operates on 3.3V or 5V Nominal Supplies
  • 3 Microamps Standby Current
  • 80 Microamps ON Current
  • Drives Low Cost N-Channel Power MOSFETs
  • No External Charge Pump Components
  • Controlled Switching ON and OFF Times
  • Compatible with 3.3V and 5V Logic Families
  • Available in 8-Pin SOIC

The LTC1157 dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low RDS(ON) Nchannel switch (N-channel switches are required at 3.3V because P-channel MOSFETS do not have guaranteed RDS(ON) with VGS ≤ 3.3V). The LTC1157 internal charge pump boosts the gate drive voltage 5.4V above the positive rail (8.7V above ground), fully enhancing a logic level N-channel switch for 3.3V high-side applications and a standard N-channel switch for 3.3V low-side applications.

The gate drive voltage at 5V is typically 8.8V above supply (13.8V above ground), so standard N-channel MOSFET switches can be used for both high-side and low-side applications. Micropower operation, with 3µA standby current and 80µA operating current, makes the LTC1157 well suited for battery-powered applications.

The LTC1157 is available in both 8-pin DIP and SOIC.

Applications

  • Notebook Computer Power Management
  • Palmtop Computer Power Management
  • P-Channel Switch Replacement
  • Battery Charging and Management
  • Mixed 5V and 3.3V Supply Switching
  • Stepper Motor and DC Motor Control
  • Cellular Telephones and Beepers

LTC1157
3.3V Dual Micropower High-Side/Low-Side MOSFET Driver
Ultra Low Voltage Drop 3.3V Dual High-Side Switch Gate Voltage Above Supply Product Package 1 Product Package 2
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Documentation

Data Sheet

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Tools & Simulations

LTspice


Models for the following parts are available in LTspice:

  • LTC1157
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