HMC637ALP5E
Info: : PRODUCTION
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HMC637ALP5E

GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz

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Info: : PRODUCTION tooltip
Info: : PRODUCTION tooltip
Part Details
Part Models 4
1ku List Price
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Features
  • P1dB output power: 29 dBm
  • Gain: 13 dB
  • Output IP3: 44 dBm
  • 50 Ω matched input/output
  • 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2
  • 1 assembly/test site
  • 1 fabrication site
  • Download the HMC637ASCPZ-EP data sheet (pdf)
  • Military temperature range: −55°C to +105°C
  • Product change notification
  • Controlled manufacturing baseline
  • Qualification data available on request
  • V62/19618 DSCC Drawing Number
Additional Details
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The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply. Gain flatness is ±0.75 dB from 100 MHz to 6 GHz making the HMC637ALP5E ideal for electronic warfare (EW), electronic counter-measure (ECM), radar and test equipment applications. The HMC637ALP5E amplifier radio frequency (RF) I/Os are internally matched to 50 Ω, and the 5 mm × 5 mm lead frame chip scale package (LFCSP) is compatible with high volume surface-mount technology (SMT) assembly equipment.

Applications

  • Telecom infrastructure
  • Microwave radio
  • Very small aperture terminal (VSAT)
  • Military and space
  • Test instrumentation
  • Fiber optics
Part Models 4
1ku List Price
price unavailable

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC637ALP5E
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HMC637ALP5ETR
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HMC637ASCPZ-EP-PT
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HMC637ASCPZ-EP-R7
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Software & Part Ecosystem

Software & Part Ecosystem

Tools & Simulations

Tools & Simulations 3

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