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Features
- P1dB Output Power: +30.5 dBm
- Gain: 14 dB
- Output IP3: +41 dBm
- Bias Supplies: +12V, +6V, -1V
- 50 Ohm Matched Input/Output
- Die Size: 2.98 x 2.48 x 0.1 mm
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The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC to 6 GHz making the HMC637A ideal for EW, ECM, Radar and test equipment applications.
The HMC637A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
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HMC637A-Die
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Application Note 4
Thermal Management for Surface Mount Components General Application Note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers
AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages
AN-2061: Wideband Bias Tee Design Using 0402, SMD Components
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC637A | CHIPS OR DIE |
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