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Features
- 10 years minimum data retention in the absence of external power
- Data is automatically protected during power loss
- Unlimited write cycles
- Low-power CMOS operation
- Read and write access times of 100ns
- Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
- Optional industrial (IND) temperature range of -40°C to +85°C
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The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
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DS1265W
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Data Sheet
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DS1265W: 3.3V 8Mb Nonvolatile SRAM Data Sheet (Rev.3)
DS1265W: 3.3V、8Mb非易失SRAM Data Sheet
DS1265W: 3.3V、8Mb不揮発性SRAM Data Sheet
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Software & Part Ecosystem
| Parts | Product Life Cycle | Description | ||
|---|---|---|---|---|
|
Nonvolatile SRAM5 |
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|
RECOMMENDED FOR NEW DESIGNS |
8M Nonvolatile SRAM |
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|
RECOMMENDED FOR NEW DESIGNS |
8M Nonvolatile SRAM |
|||
|
PRODUCTION |
3.3V 256k Nonvolatile SRAM |
|||
|
PRODUCTION |
3.3V 1024k Nonvolatile SRAM |
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|
PRODUCTION |
3.3V 4096k Nonvolatile SRAM |
|||
|
Product2 |
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|
3.3V 2048kb Nonvolatile SRAM |
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|
|
3.3V 16Mb Nonvolatile SRAM |
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