Overcoming Challenges in GaN Power Amplifier Implementations

We will introduce some of the benefits of gallium nitride (GaN) over gallium arsenide (GaAs) IC technologies and explore some of the challenges present in moving from GaAs to GaN power amplifier implementations for die, surface mount, and mechanical attach. Challenges will include assembly, thermal management, and DC bias considerations. We will show how ADI's solutions can be used to overcome those challenges.

Sean earned a B.S. degree in Physics from UMass Amherst in 1996. Since that time, he has held a number of roles with RF/microwave semiconductor companies, including Product Engineering with Analog Devices, Peregrine Semiconductor, IDT, and NXP, and Applications Engineering with Hittite Microwave.