1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.
- Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range
- Leakage current <0.25 nA maximum at 85°C
- Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply
- Automotive temperature range: −40°C to +125°C
- Small 14-lead TSSOP package
- Automatic test equipment
- Data acquisition systems
- Battery-powered instruments
- Communication systems
- Sample-and-hold systems
- Remote-powered equipment
- Audio and video signal routing
- Relay replacement
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At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
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