HMC930A-DIE

GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz


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Product Details

The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).

Applications

  • Test instrumentation
  • Microwave radios and VSATs
  • Military and space
  • Telecommunications infrastructure
  • Fiber optics

Product Lifecycle

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At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.

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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well.  "Zero defects" for shipped products is always our goal.

HMC930A-DIE Material Declaration
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The USA list pricing shown is for BUDGETARY USE ONLY, shown in United States dollars (FOB USA per unit for the stated volume), and is subject to change. International prices may differ due to local duties, taxes, fees and exchange rates. For volume-specific price or delivery quotes, please contact your local Analog Devices, Inc. sales office or authorized distributor. Pricing displayed for Evaluation Boards and Kits is based on 1-piece pricing.


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