21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter
The HMC815B is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant package that operates from 21 GHz to 27 GHz. This device provides a small signal conversion gain of 12 dB and a sideband rejection of 20 dBc. The HMC815B utilizes a driver amplifier proceeded by an in phase/quadrature (I/Q) mixer where the LO is driven by an active 2× multiplier. IF1 and IF2 mixer inputs are provided, and an external 90° hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband.
The HMC815B is a smaller alternative to hybrid style single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.
The HMC815B is available in 4.90 mm × 4.90 mm, 32-terminal ceramic LCC package and operates over the −40°C to +85°C temperature range. An evaluation board for the HMC815B is also available upon request.
- Point to point and point to multipoint radios
- Military radars, electronic warfare, and electronic intelligence
- Satellite communications
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Product Selection Guide
RF, Microwave, and Millimeter Wave IC Selection Guide 2017
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The USA list pricing shown is for BUDGETARY USE ONLY, shown in United States dollars (FOB USA per unit for the stated volume), and is subject to change. International prices may differ due to local duties, taxes, fees and exchange rates. For volume-specific price or delivery quotes, please contact your local Analog Devices, Inc. sales office or authorized distributor. Pricing displayed for Evaluation Boards and Kits is based on 1-piece pricing.