Aerospace Low Noise, Matched Dual NPN Transistor
Input protection diodes are provided across the emitter-base junctions to prevent degredation of the device characteristics due to reversed-biased emitter current. The substrate is clamped to the most negative emitter by the parasitic isolation junction created by the protection diodes. This results in complete isolation between the transistors.
The MAT02 should be used in any application where low noise is priority. The MAT02 can be used as an input stage to make an amplifier with noise voltage of less than 1.0nV/Hz at 100 HZ. Other applications such as log/anti-log circuits, may use the excellent logging conformity of the MAT02. Typical bulk resistance is only 0.3 Ohm to 0.4 Ohm. The MAT02 electrical characteristics approach those of an ideal transistor when operated over a collector current range of 1µA to 10mA.
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
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