Features and Benefits
- Output IP3: +46 dBm
- Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
- +25 dBm W-CDMA Channel Power @ -50 dBc ACPR
- Integrated Power Control (Vpd)
- QSOP16G SMT Package: 29.4 mm²
- Included in the HMC-DK002 Designer’s Kit
The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.
- CDMA & W-CDMA
- GSM, GPRS & Edge
- Base Stations & Repeaters
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Application Notes (4)
Tools & Simulations
Product Selection Guide (1)
Tape & Reel Specification (1)
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
Sample & Buy
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